2000-04-20 page 1 spp80n03s2l-03 SPB80N03S2L-03 preliminary data optimos ? ? ? ? = == = power-transistor features ? n-channel ? enhancement mode ? avalanche rated ? logic level ? d v /d t rated ? = 175c operating temperature product summary drain source voltage v ds 30 v drain-source on-state resistance r ds ( on ) 3.1 m ? continuous drain current i d 80 a pin 1 pin 2/4 pin 3 g d s type package ordering code spp80n03s2l-03 p-to220-3-1 q67040-s4248 SPB80N03S2L-03 p-to263-3-2 q67040-s4259 maximum ratings ,at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25 c, 1) t c = 100 c i d 80 80 a pulsed drain current t c = 25 c i d puls 320 avalanche energy, single pulse i d = 80 a , v dd = 25 v, r gs = 25 ? e as 810 mj reverse diode d v /d t i s = 80 a, v ds = 24 v, d i /d t = 200 a/s, t jmax = 175 c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 c p tot 300 w operating and storage temperature t j , t st g -55...+175 c iec climatic category; din iec 68-1 55/175/56 1 current limited by bondwire; with an r thjc = 0.5 k/w the chip is able to carry i d = 255a
2000-04-20 page 2 spp80n03s2l-03 SPB80N03S2L-03 preliminary data thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 0.5 k/w thermal resistance, junction - ambient, leaded r thj a - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - - 62 40 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = 0 v, i d = 1 ma v (br)dss 30 - - v gate threshold voltage, v gs = v ds i d = 250 a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds = 30 v, v gs = 0 v, t j = 25 c v ds = 30 v, v gs = 0 v, t j = 125 c i dss - - 0.01 1 1 100 a gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 1 100 na drain-source on-state resistance v gs = 4.5 v, i d = 80 a r ds(on) - 3.1 3.8 m ? drain-source on-state resistance v gs = 10 v, i d = 80 a r ds(on) - 2.3 3.1 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2000-04-20 page 3 spp80n03s2l-03 SPB80N03S2L-03 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =80a 93 185 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 6100 7600 pf output capacitance c oss - 2360 2950 reverse transfer capacitance c rss - 460 620 turn-on delay time t d ( on ) v dd =15v, v gs =4.5v, i d =80a, r g =1.1 ? - 20 30 ns rise time t r - 340 510 turn-off delay time t d ( off ) - 57 85 fall time t f - 80 120 gate charge characteristics gate to source charge q g s v dd =24v, i d =80a - 18 23 nc gate to drain charge q g d - 47 63 gate charge total q g v dd =24v, i d =80a, v gs =0 to 10v - 160 210 gate plateau voltage v (p lateau ) v dd = 24 v , i d =80a - 2.9 - v reverse diode inverse diode continuous forward current i s t c =25c - - 80 a inverse diode direct current, pulsed i sm - - 320 inverse diode forward voltage v sd v gs =0v, i f =80a - 0.9 1.2 v reverse recovery time t rr v r =15v, i f = l s , d i f /d t =100a/s - 58 72 ns reverse recovery charge q rr - 71 88 nc
2000-04-20 page 4 spp80n03s2l-03 SPB80N03S2L-03 preliminary data power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 c 190 t c 0 40 80 120 160 200 240 w 320 spp80n03s2l-03 p tot drain current i d = f ( t c ) parameter: v gs 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 a 90 spp80n03s2l-03 i d safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 1 10 2 10 3 10 a spp80n03s2l-03 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s t p = 36.0 s transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w spp80n03s2l-03 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2000-04-20 page 5 spp80n03s2l-03 SPB80N03S2L-03 preliminary data typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0 20 40 60 80 100 120 140 160 a 190 spp80n03s2l-03 i d v gs [v] a a 2.5 b b 2.8 c c 3.0 d d 3.3 e e 3.5 f f 3.8 g g 4.0 h h 4.5 i p tot = 300 w i 10.0 typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 20 40 60 80 100 120 a 160 i d 0 1 2 3 4 5 6 7 8 9 m ? 11 spp80n03s2l-03 r ds(on) v gs [v] = d d 3.3 e e 3.5 f f 3.8 g g 4.0 h h 4.5 i i 10.0 typ. transfer characteristics i d = f ( v gs ) v ds 2 x i d x r ds(on)max parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs 0 40 80 120 160 200 240 a 320 i d typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 20 40 60 80 100 120 140 160 a 200 i d 0 25 50 75 100 125 150 175 200 s 250 g fs
2000-04-20 page 6 spp80n03s2l-03 SPB80N03S2L-03 preliminary data drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 80 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 m ? 7.5 spp80n03s2l-03 r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 250 a -60 -20 20 60 100 c 180 t j 0.0 0.5 1.0 1.5 2.0 v 3.0 v gs(th) typ. 98% 2% typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 5 10 pf c c iss c oss c rss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd 0 10 1 10 2 10 3 10 a spp80n03s2l-03 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%)
2000-04-20 page 7 spp80n03s2l-03 SPB80N03S2L-03 preliminary data avalanche energy e as = f ( t j ) par.: i d = 80 a , v dd = 25 v, r gs = 25 ? 25 45 65 85 105 125 145 c 185 t j 0 100 200 300 400 500 600 700 mj 850 e as typ. gate charge v gs = f ( q gate ) parameter: i d = 80 a pulsed 0 40 80 120 160 200 nc 260 q gate 0 2 4 6 8 10 12 v 16 spp80n03s2l-03 v gs 0,8 v ds max ds max v 0,2 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 27 28 29 30 31 32 33 34 35 v 37 spp80n03s2l-03 v (br)dss
2000-04-20 page 8 spp80n03s2l-03 SPB80N03S2L-03 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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